Silicon Dioxide Physical Preparation: A Comprehensive Overview of Processes, Characteristics, and Applications
Mu mfumo wezobuchwepheshe wokulungiselela i-silicon dioxide, indlela ye-physical ibamba indawo ebalulekile emikhakheni yezezimboni efana ne-rubber ne-plastics ngenxa yezinzuzo zayo zokuba nenqubo elula nokuba nezinhlobonhlobo ezinhle zemvelo. Umqondo wayo oyinhloko uwukushintsha ifomu nosayizi wezinto ezisemqoka ngesenzo somzimba (njengamandla omshini, ukuhamba komoya, nokushiswa okushisayo) ukuze uthole imikhiqizo ye-silicon dioxide ehambisana nezidingo. Phakathi kwalezi, ukulungiselela i-crystalline nano-silicon dioxide kuncike kakhulu endleleni yokuphahlazeka komshini.
I. Core Process Types: Principles, Procedures, and Characteristics
Die Prozessrouten zur physischen Vorbereitung von Siliciumdioxid konzentrieren sich auf "Morphologie-Regulierung" und "Partikelgrößenkontrolle" und sind hauptsächlich in drei Kategorien unterteilt. Jeder Typ des Prozesses unterscheidet sich erheblich in Bezug auf Ausrüstung, Verfahren und Produkteigenschaften:
1. Mekaniese Vergruizing Metode: Die Hoofstroom Keuse vir Industriële Massaproduksie
Njengoba kuyinqubo ecasulayo kakhulu, indlela yokuphula imishini ye-mechanical yehlisa usayizi wezakhi ngokuphula isakhiwo se-crystal se-silicon dioxide izinto ezisemqoka ngamandla angaphandle. Inqubo yayo icacile: i-quartz yemvelo noma i-silicon dioxide ye-industrial-grade isetshenziswa njengezinto ezisemqoka, futhi imishini efana nezinsimbi ze-ball ne-jet mills isetshenziswa ukuze kufakwe umthelela, ukushefa, kanye namandla okuphikisana. Ngemuva kokuphulwa, ubuchwepheshe bokuhlukanisa nokuhlukanisa busetshenziswa ukuze kuhlolwe imikhiqizo enosayizi wezakhi ofanele.
Ihange le- particle size range yemikhiqizo evela kule nqubo ivamise ukuba ngu-10–200 nm, lapho imikhiqizo eminingi igxile emkhakheni we-10–40 nm, futhi ezinye izinqubo ezithuthukisiwe zingafinyelela ku-100–120 nm. Nokho, ngenxa yokukhawulelwa yisigaba sokusebenza kwemishini, ama-particles avame ukuhlanganiswa ngenxa yokwanda kwamandla ebusweni, ngakho-ke kudingeka ukulungiswa okwengeziwe kobuso (isb., ukusebenzisa ama-silane coupling agents) ukuze kuthuthukiswe ukusebenza kokuhlanganiswa. Nokho, inezinzuzo ezivelele: ukuhamba kwenqubo kulula, akudingeki izinto ezinzima zamakhemikhali, inobungane bemvelo obuqinile, futhi ifanele ukukhiqizwa kwezinga elikhulu, okwenza kube inqubo ekhethwayo emikhakheni ephakathi naphakathi.
2. Fisikale Vapor Deposition (PVD): 'n Eksklusiewe Oplossing vir Hoë-Puurheid Films
The PVD-proses fokus op die voorbereiding van silikondioxied-films, met die kern die realisering van materiaalafsetting deur fisiese prosesse in 'n vakuumomgewing. Dit sluit hoofsaaklik twee sub-metodes in:
- Reactive Sputtering
- Radio Frequency (RF) Sputtering
3. Flame Fusion Method: A Specialized Process for Spherical Silica Micropowders
Le faele e etselitsoe ka ho khetheha bakeng sa ho lokisetsa spherical silica micropowders. Motheo oa eona ke ho sebelisa plasma e futhumetseng ho chesa thepa e tala, e etsa hore likarolo li be le sebopeho sa spherical ka mocheso o phahameng. Le faele, ka lebaka la tlhoko ea ho boloka tikoloho e futhumetseng, ts'ebeliso ea eona ea matla e phahame haholo ho feta ea mekhoa e meng ea 'mele. E tloaelehile hore e sebelisoe feela maemong a hlokang likarolo tse khethehileng tsa spherical 'me ha e so be mokhoa o amanang le batho ba bangata.
II. Core Characteristics of the Process: Coexistence of Advantages and Limitations
Izi zimpawu zokulungiselela i-silicon dioxide ngokomzimba zikhombisa iphethini "eyiphola." Izinzuzo zayo zenza ukuthi ingabi nendawo ethile, kuyilapho imikhawulo yayo ichaza imingcele yokusetshenziswa kwayo.
1. Core Advantages: Adapting to the Needs of Mid-to-Low-End Industrialization
- Uhlelo neMvelo Izinzuzo
- Izindleko Zokuncintisana
- Adaptability to Specific Functions
2. Key Limitations: Restricting Breakthroughs in High-Value-Added Fields
- Purity and Particle Size Bottlenecks
- Agglomeration en Dispersion Probleem
- Limitations in Functionalization and Processes
III. Izimo Zokusebenza: Ukugxila Emikhakheni Ephakathi Nephansi, Engafinyelelekanga Emikhakheni Enenani Eliphezulu Lokwengeza
Ngezinye zezinto ezithinta izindleko nenqubo, i-silicon dioxide eyenziwe ngendlela ye-physical isetshenziswa kakhulu emikhakheni yezimboni ephakathi nendawo kuya phansi, kodwa kunzima ukuqhudelana nendlela ye-chemical emikhakheni enenani eliphezulu.
1. Mainstream Application Fields: Adapting to the Needs of Basic Industry
- Rubber Industry
- Plastikmodifikasie
- Coating ne Ink Industry
- Daiy Chemikal ne Feed Filds
2. Izikhala Zokufaka: I-"Shortcoming" emikhakheni enenani eliphezulu lokwengeza
In hoë-waarde-toegevoegde velde soos elektronika (bv. hoë-puriteit silikondioxied vir skyfverpakking) en farmaseutika (bv. farmaseutiese graad silikondioxied), kan die fisiese metode nie aan industrie standaarde voldoen nie weens probleme soos onvoldoende puriteit en moeilikheid in presiese deeltjie-grootte beheer. Tans moet dit steeds staatmaak op hoë-puriteit, ultra-fyn silikondioxied produkte wat deur die chemiese metode voorberei is.
IV. Isiphetho: Indawo kanye Nezindlela Zesikhathi Esizayo Zendlela Yomzimba
The physical method for silicon dioxide preparation is a "basic solution" in industrial production. With the advantages of simple process, low cost, and good environmental friendliness, it occupies a dominant position in mid-to-low-end fields such as rubber, plastics, and coatings, and is an important technology supporting the development of basic industry. However, its limitations in purity, particle size control, and functional modification determine that it is difficult to break through the technical barriers of high-value-added fields.
In the future, the development direction of the physical method may focus on two aspects: first, improving the uniformity of particle size and reducing the risk of agglomeration by optimizing crushing equipment and classification technology; second, combining simple chemical modification processes (such as low-cost surface modifiers) to improve product functions while controlling costs, and gradually penetrating into mid-to-high-end fields to achieve complementary development with the chemical method.