Physical Preparation of Silicon Dioxide: A Comprehensive Overview of Processes, Characteristics, and Applications

Created on 08.01

Physical Preparation of Silicon Dioxide: A Comprehensive Overview of Processes, Characteristics, and Applications

In the technical system for silicon dioxide preparation, the physical method occupies an important position in industrial fields such as rubber and plastics due to its advantages of simple process and good environmental friendliness. Its core concept is to change the shape and particle size of raw materials through physical actions (such as mechanical force, vapor deposition, and high-temperature melting) to finally obtain silicon dioxide products that meet requirements. Among these, the preparation of crystalline nano-silicon dioxide mainly relies on the mechanical crushing method.

I. Core Process Types: Principles, Procedures, and Characteristics

The process routes of physically preparing silicon dioxide focus on "morphology regulation" and "particle size control", and are mainly divided into three categories. Each type of process differs significantly in terms of equipment, procedures, and product properties:

1. Mechanical Crushing Method: The Mainstream Choice for Industrial Mass Production

As the most widely used physical process, the mechanical crushing method reduces particle size by breaking the crystal structure of silicon dioxide raw materials with external force. Its process flow is clear: natural quartz or industrial-grade silicon dioxide is used as the raw material, and equipment such as ball mills and jet mills are employed to apply impact, shear, and friction forces. After crushing, classification and separation technology is used to screen out products with the target particle size.

The particle size range of the products from this process is usually 10–200 nm, with most products concentrated in the range of 10–40 nm, and some optimized processes can achieve 100–120 nm. However, limited by the principle of mechanical action, particles tend to agglomerate due to increased surface energy, so additional surface modification (e.g., using silane coupling agents) is required to improve dispersion performance. Nevertheless, it has prominent advantages: the process flow is simple, no complex chemical reagents are needed, it has strong environmental friendliness, and it is suitable for large-scale industrial production, making it the preferred process in mid-to-low-end fields.

2. Physical Vapor Deposition (PVD): An Exclusive Solution for High-Purity Films

The PVD process focuses on preparing silicon dioxide films, with the core being the realization of material deposition through physical processes in a vacuum environment. It mainly includes two sub-methods:

Reactive Sputtering
Radio Frequency (RF) Sputtering

3. Flame Fusion Method: A Specialized Process for Spherical Silica Micropowders

This process is specifically designed for the preparation of spherical silica micropowders. Its core is to use high-temperature plasma to melt raw materials, making the particles take on a spherical shape at high temperatures. However, due to the need to maintain a high-temperature environment, its energy consumption is significantly higher than that of other physical processes. It is usually only used in scenarios requiring specific spherical particles and has not become a mainstream process.

II. Core Characteristics of the Process: Coexistence of Advantages and Limitations

The characteristics of physically preparing silicon dioxide show a "polarized" pattern. Its advantages make it irreplaceable in specific fields, while its limitations define its application boundaries.

1. Core Advantages: Adapting to the Needs of Mid-to-Low-End Industrialization

Process and Environmental Advantages
Cost Advantage
Adaptability to Specific Functions

2. Key Limitations: Restricting Breakthroughs in High-Value-Added Fields

Purity and Particle Size Bottlenecks
Agglomeration and Dispersion Problems
Limitations in Functionalization and Processes

III. Application Scenarios: Focusing on Mid-to-Low-End Fields, Unreachable for High-Value-Added Fields

Relying on its advantages in cost and process, silicon dioxide prepared by the physical method is widely used in mid-to-low-end industrial fields, but it is difficult to compete with the chemical method in high-value-added fields.

1. Mainstream Application Fields: Adapting to the Needs of Basic Industry

Rubber Industry
Plastic Modification
Coating and Ink Industry
Daily Chemical and Feed Fields

2. Application Boundaries: The "Shortcoming" in High-Value-Added Fields

In high-value-added fields such as electronics (e.g., high-purity silicon dioxide for chip packaging) and pharmaceuticals (e.g., pharmaceutical-grade silicon dioxide), the physical method cannot meet industry standards due to issues such as insufficient purity and difficulty in precise particle size control. Currently, it still needs to rely on high-purity, ultra-fine silicon dioxide products prepared by the chemical method.

IV. Conclusion: The Positioning and Future Direction of the Physical Method

The physical method for silicon dioxide preparation is a "basic solution" in industrial production. With the advantages of simple process, low cost, and good environmental friendliness, it occupies a dominant position in mid-to-low-end fields such as rubber, plastics, and coatings, and is an important technology supporting the development of basic industry. However, its limitations in purity, particle size control, and functional modification determine that it is difficult to break through the technical barriers of high-value-added fields.

In the future, the development direction of the physical method may focus on two aspects: first, improving the uniformity of particle size and reducing the risk of agglomeration by optimizing crushing equipment and classification technology; second, combining simple chemical modification processes (such as low-cost surface modifiers) to improve product functions while controlling costs, and gradually penetrating into mid-to-high-end fields to achieve complementary development with the chemical method.

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